linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490-9160 ? fax: 510 353-0261 linear integrated systems SD210DE/214de n-channel lateral dmos switch product summary features benefits applications ?ultra-high speed switching t on : 1 ns ?high-speed system performance ?fast analog switch ?ultra-low reverse capacitance: 0.2 pf ?low insertion loss at high frequencies ?fast sample-and-holds ?low guaranteed r ds @5 v low transfer signal loss ?pixel-rate switching ?low turn-on threshold voltage ?simple driver requirement ?dac deglitchers ?n-channel enhancement mode ?single supply operation ?high-speed driver description the SD210DE/214de are enhancement-mode mosfets designed for high speed low-glitch switching in audio, video, and high-frequency applications. the sd214de is normally used for 10-v analog switching. these mosfets utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. these mosfets do not have a gate protection zener diode which results in lower gate leakage and voltage capability from gate to substrate. a poly-silicon gate is featured for manufacturing reliability. for similar products see: quad array?d5000/5400 series, and zener protected?d211de/sst211 series. absolute maximum ratings (t a = 25 0 c unless otherwise noted) gate-drain, gate-source voltage ......................................................... 40 v gate-substrate voltage ......................................................................... 30 v drain-source voltage (SD210DE) ....................................... 30 v (sd214de) ....................................... 20 v source-drain voltage (SD210DE) ....................................... 10 v (sd214de) ....................................... 20 v drain-substrate voltage (SD210DE) ....................................... 30 v (sd214de) ....................................... 25 v source-substrate voltage (SD210DE) ....................................... 15 v (sd214de) ....................................... 25 v drain current ........................................................................................ 50 ma lead temperature (1/16?from case for 10 seconds) ............................. 300 0 c storage temperature .................................................................... -65 to 150 0 c operating junction temperature ................................................. -55 to 125 0 c power dissipation a ............................................................................................................................... ..... 300 mw notes: a. derate 3 mw/ 0 c above 25 0 c
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490-9160 ? fax: 510 353-0261 specifications a notes: a. t a = 25 0 c unless otherwise noted. b. b is the body (substrate) and v (br) is breakdown. c. typical values are for design aid only, not guaranteed nor subject to production testing.
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